23 November 2016

操作流程

  1. 确认实验室的气体检测装置为绿灯,确认设备loadlock中有硅片,确认电脑System界面中为绿三角(真空度正常),确认分子泵的速度温度指示为绿色
  2. 如果没有登录,输入user - s102user登录
  3. 检查上一个用户的使用记录,查看相应的表,空runChamber Clean或者Chamber Clean Two Steps
  4. 空run本次ICP要使用的程序diamond etch-1五分钟
  5. loadlock中点击stop停止真空泵抽气,点击vent对loadlock放气至大气压,大约至时可以开仓放样品
  6. 在recipe中选择Load-Run-diamond etch-1,检查相应的参数设置,设置运行时间为30s
  7. 运行程序,待程序结束
  8. 在System界面中点击stop,点击vent,取出样品,放回硅片,点击pump抽真空
  9. 设置Process > Chamber > Chiller control > temperature至20,点击start,两秒钟之后点击stop,观察温度正在下降,即可离开

Recipe

Remove after FIB/ Get a Distinct Surface

  • Oxygen 7, Argon 8, RF 120W, ICP 1000W
  • Check DC bias 243
  • Time: 30s
  • About 70nm removed

Etch Several Microns

Preclean (without sample)

  • 30min, 50sccm, 10sccm, RF 120W, ICP 1500W

program: Chamber Clean

Prepare (without sample)

  1. Purge: 10mTorr, 30s, Ar60sccm
  2. Stablize: 10mTorr, 1min, O45sccm
  3. Standard O2: 20mTorr, 5min, O2 45sccm, RF 30W, ICP 800W
  4. Pump 30s
  5. Cond: 8mTorr, 8min, Ar 25sccm, Cl2 40sccm, RF 200W, ICP 320W, DC bias <700V
  6. Purge: 10mTorr, 30s, Ar 90 sccm

program: preclean-zu

Ar/Cl Etching:

  1. Purge: 10mTorr, 1min, Ar 50sccm
  2. Stablize: 8mTorr, 1min, Ar 25sccm, Cl2 40sccm
  3. Ar/Cl etch: 8mTorr, 30min, Ar 25sccm, Cl2 40sccm, RF 200W, ICP 320W
  4. Purge: 10mTorr, 30s, Ar 90sccm
  5. pump: 20min
  6. repeat 12 times

program: Ar/Cl etch long time

Etching rate: 2um/30min

Etching depth: 14um



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